The sputtering technology of magnetron sputtering is "DC magnetron sputtering technology"
In order to solve the shortcomings of cathode sputtering, DC magnetron sputtering technology was developed in the 1970s, which effectively overcomes the weak points of low cathode sputtering rate and the increase of the temperature of the substrate by electrons, and thus has achieved rapid development. And widely used.
The principle is: In magnetron sputtering, because the moving electrons are subjected to Lorentz force in the magnetic field, their trajectory will bend or even produce spiral motion, and their path of motion will become longer, thus increasing the collision with working gas molecules. The number of times increases the plasma density, so that the magnetron sputtering rate is greatly improved, and it can work at a lower sputtering voltage and pressure, reducing the tendency of film contamination; on the other hand, it also increases the incidence of the substrate. The energy of the atoms on the bottom surface can thus greatly improve the quality of the film. At the same time, when the electrons that have lost energy after multiple collisions reach the anode, they have become low-energy electrons, so that the substrate will not be overheated. Therefore, the magnetron sputtering method has the advantages of "high speed" and "low temperature".
The disadvantage of this method is that the insulator film cannot be prepared, and the uneven magnetic field used in the magnetron electrode will cause significant uneven etching of the target material, resulting in a low utilization rate of the target material, generally only 20%-30%.